학술논문
W-band high gain passivated 0.15 /spl mu/m InP-based HEMTs MMIC technology with high thermal stability on InP substrates
Document Type
Conference
Source
Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129) Indium phosphide and related materials Indium Phosphide and Related Materials, 1998 International Conference on. :227-230 1998
Subject
Language
ISSN
1092-8669
Abstract
InP-based HEMTs have to date demonstrated the best high frequency characteristics of any transistor, including the highest f/sub t/ and f/sub max/, the lowest noise figure and the highest efficiencies for power amplification. These characteristics make this technology the best choice for advanced systems for space and military applications such as smart munitions, passive imaging and radiometry, and commercial applications such as automotive radar. Unfortunately, the relative immaturity of InP-based HEMT processing technology, in comparison to that of GaAs based PHEMTs, limits its introduction into systems. Consequently, much effort is being directed towards the development of reliability and manufacturability of the InP-based HEMT MMICs. In this paper, we demonstrate the fabrication and the design of W-band high gain passivated 0.15 /spl mu/m double side doped InAlAs/InGaAs HEMTs with low feed-back capacitance, and high uniformity and yield over 2" InP substrates. An explanation of the physical origin of the gate-drain feed-back capacitance is given. Furthermore, the robustness of our InP-based HEMT technology is demonstrated by high temperature stress.