학술논문
VUV-Sensitive Silicon Photomultipliers for Xenon Scintillation Light Detection in nEXO
Document Type
Periodical
Author
Jamil, A.; Ziegler, T.; Hufschmidt, P.; Li, G.; Lupin-Jimenez, L.; Michel, T.; Ostrovskiy, I.; Retiere, F.; Schneider, J.; Wagenpfeil, M.; Alamre, A.; Albert, J.B.; Anton, G.; Arnquist, I.J.; Badhrees, I.; Barbeau, P.S.; Beck, D.; Belov, V.; Bhatta, T.; Bourque, F.; Brodsky, J.P.; Brown, E.; Brunner, T.; Burenkov, A.; Cao, G.F.; Cao, L.; Cen, W.R.; Chambers, C.; Charlebois, S.A.; Chiu, M.; Cleveland, B.; Coon, M.; Cote, M.; Craycraft, A.; Cree, W.; Dalmasson, J.; Daniels, T.; Darroch, L.; Daugherty, S.J.; Daughhetee, J.; Delaquis, S.; Mesrobian-Kabakian, A.D.; DeVoe, R.; Dilling, J.; Ding, Y.Y.; Dolinski, M.J.; Dragone, A.; Echevers, J.; Fabris, L.; Fairbank, D.; Fairbank, W.; Farine, J.; Feyzbakhsh, S.; Fontaine, R.; Fudenberg, D.; Gallina, G.; Giacomini, G.; Gornea, R.; Gratta, G.; Hansen, E.V.; Harris, D.; Hasan, M.; Heffner, M.; HoBl, J.; Hoppe, E.W.; House, A.; Hughes, M.; Ito, Y.; Iverson, A.; Jessiman, C.; Jewell, M.J.; Jiang, X.S.; Karelin, A.; Kaufman, L.J.; Koffas, T.; Kravitz, S.; Krucken, R.; Kuchenkov, A.; Kumar, K.S.; Lan, Y.; Larson, A.; Leonard, D.S.; Li, S.; Li, Z.; Licciardi, C.; Lin, Y.H.; Lv, P.; MacLellan, R.; Mong, B.; Moore, D.C.; Murray, K.; Newby, R.J.; Ning, Z.; Njoya, O.; Nolet, F.; Nusair, O.; Odgers, K.; Odian, A.; Oriunno, M.; Orrell, J.L.; Ortega, G.S.; Overman, C.T.; Parent, S.; Piepke, A.; Pocar, A.; Pratte, J.; Qiu, D.; Radeka, V.; Raguzin, E.; Rao, T.; Rescia, S.; Robinson, A.; Rossignol, T.; Rowson, P.C.; Roy, N.; Saldanha, R.; Sangiorgio, S.; Schmidt, S.; Schubert, A.; Sinclair, D.; Skarpaas, K.; Soma, A.K.; St-Hilaire, G.; Stekhanov, V.; Stiegler, T.; Sun, X.L.; Tarka, M.; Todd, J.; Tolba, T.; Totev, T.I.; Tsang, R.; Tsang, T.; Vachon, F.; Veenstra, B.; Veeraraghavan, V.; Visser, G.; Vuilleumier, J.; Wang, Q.; Watkins, J.; Weber, M.; Wei, W.; Wen, L.J.; Wichoski, U.; Wrede, G.; Wu, S.X.; Wu, W.H.; Xia, Q.; Yang, L.; Yen, Y.; Zeldovich, O.; Zhang, X.; Zhao, J.; Zhou, Y.
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 65(11):2823-2833 Nov, 2018
Subject
Language
ISSN
0018-9499
1558-1578
1558-1578
Abstract
Future ton-scale liquefied noble gas detectors depend on efficient light detection in the vacuum ultraviolet (VUV) range. In the past years, silicon photomultipliers (SiPMs) have emerged as a valid alternative to standard photomultiplier tubes or large-area avalanche photodiodes. The next-generation double-beta decay experiment, nEXO, with a 5-ton liquid xenon time projection chamber will use SiPMs for detecting the 175-nm xenon scintillation light, in order to achieve an energy resolution of $\boldsymbol {\sigma }/\boldsymbol {Q_{\beta \beta }} = 1$ %. This paper presents recent measurements of the VUV-HD generation SiPMs from Fondazione Bruno Kessler, Trento, Italy, in two complementary setups. It includes measurements of the photon-detection efficiency (PDE) with gaseous xenon scintillation light in a vacuum setup and dark measurements in a dry nitrogen gas setup. We report improved PDE at 175 nm compared to previous generation devices that would meet the criteria of nEXO. Furthermore, we present the projected nEXO detector light collection and energy resolution that could be achieved by using these SiPMs.