학술논문
The observation of trapping and detrapping effects in high-k gate dielectric MOSFETs by a new gate current Random Telegraph Noise (IG-RTN) approach
Document Type
Conference
Author
Source
2008 IEEE International Electron Devices Meeting Electron Devices Meeting, 2008. IEDM 2008. IEEE International. :1-4 Dec, 2008
Subject
Language
ISSN
0163-1918
2156-017X
2156-017X
Abstract
A new method, called gate current Random Telegraph Noise (I G RTN), was developed to analyze the oxide quality and reliability of high-k gate dielectric MOSFETs. First, a single electron trapping/detrapping from process induced trap in nMOSFET was observed and the associated physical mechanism was proposed. Secondly, I G RTN has also been successfully applied to differentiate the difference in electron tunneling mechanism for a device under high-field or low-field stress. Finally, the soft-breakdown (SBD) behavior of a device can be clearly identified. Its I G RTN characteristic is different from that before soft-breakdown. It was found that SBD will indeed induce extra leakage current as a result of an additional breakdown path.