학술논문

Estimation of the energy resolution limit for particle detectors with schottky-barrier based on VPE GaAs
Document Type
Conference
Source
2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/RTSD) Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/RTSD), 2016. :1-4 Oct, 2016
Subject
General Topics for Engineers
Detectors
Energy resolution
Gallium arsenide
Energy loss
Schottky barriers
Annealing
Semiconductor device measurement
Spectrometric detectors
Schottky contact
Geant4 simulation
Language
Abstract
This paper reports the results of the characterization of detectors based on high purity VPE GaAs with an active area of 25 and 80 mm 2 for the detection of nuclear reaction products at interactions between heavy ions and light nuclei. The detectors have demonstrated a high FWHM of 14.5 and 15.5 keV for 25 and 80 mm 2 , respectively (5.499 MeV line of 238 Pu). Various components of the total energy resolution were analysed in order to estimate the energy resolution limit of the detectors. It was shown that the energy loss straggling of α-particles in the dead layer is the main contribution to the energy resolution of the studied detectors. Thus, the optimization of the Pt Schottky contact formation process can make it possible to improve the energy resolution (by 1–2 keV) of the VPE GaAs detectors.