학술논문

L-Band LiNbO3/SiO2/Sapphire Longitudinal Leaky Saw (LLSAW) Resonators with High Figure of Merit
Document Type
Conference
Source
2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS) Micro Electro Mechanical Systems (MEMS), 2024 IEEE 37th International Conference on. :1095-1098 Jan, 2024
Subject
Bioengineering
Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Power, Energy and Industry Applications
Performance evaluation
Silicon compounds
Surface acoustic waves
Surface acoustic wave devices
Resonators
L-band
Substrates
Longitudinal Leaky SAW (LLSAW)
lithium niobate on sapphire (LNOS)
high figure of merit (FoM)
piezoelectric resonator
Language
ISSN
2160-1968
Abstract
This work presents a set of high performance longitudinal leaky surface acoustic wave (LLSAW) resonators based on lithium niobate LN/SiO 2 /Sapphire (LNOS) characterized by a larger phase velocity. The LLSAW resonators on the proposed LNOS platform results a remarkable 9-fold improvement the figure of merit compared to the identical devices on LN/SiO 2 /Silicon platform. As a result, the LLSAW resonators demonstrated both a high-quality factor (Q max > 1010) and a large electromechanical coupling coefficient $\left( {k_{{\text{eff}}}^2 > 14.3\% } \right)$ which yielding a figure-of-merit $\left( {{\text{FoM}} = k_{{\text{eff}}}^2 \cdot {Q_{\max }}} \right)$ exceeding 145 for the first time in L-band region. These findings showcase a highly competitive performance compared to state-of-art thin film LLSAW resonators.