학술논문

A Comprehensive Review of DRAM NBTI Issues and Solutions
Document Type
Conference
Source
2023 IEEE International Conference on Memristive Computing and Applications (ICMCA) Memristive Computing and Applications (ICMCA), 2023 IEEE International Conference on. :1-5 Dec, 2023
Subject
Components, Circuits, Devices and Systems
Signal Processing and Analysis
Negative bias temperature instability
Degradation
Ring oscillators
Technological innovation
Reviews
Thermal variables control
Circuits
DRAM
Invertor
NBTI Mechanism
pMOSFET
Process Change
Ring Oscillator
Language
Abstract
A comprehensive review of NBTI issues and their preventions were summarized over the past years. The NBTI related process issues, degradation mechanism, and process solution were systemically summarized. We also analyzed some NBTI risk circuits and provided improve suggestions to enlarge DRAM circuit NBTI tolerance. To disclosure the circuit level real risk, a new methodology was investigated with quiz-static DC stress on ring oscillator. Its degradation exhibits a good corelation to that of single device level NBTI performance, and can be used to guide the definition of NBTI specification. This work provides some valuable insights to DRAM NBTI solutions.