학술논문

Design and Analysis of $D$ -Band On-Chip Modulator and Signal Source Based on Split-Ring Resonator
Document Type
Periodical
Source
IEEE Transactions on Very Large Scale Integration (VLSI) Systems IEEE Trans. VLSI Syst. Very Large Scale Integration (VLSI) Systems, IEEE Transactions on. 27(7):1513-1526 Jul, 2019
Subject
Components, Circuits, Devices and Systems
Computing and Processing
Magnetic resonance
Frequency modulation
Oscillators
Erbium
CMOS oscillator
coupled oscillator network (CON)
high-output power density
metamaterial
modulator
slow wave
split-ring resonator (SRR)
terahertz (THz)
Language
ISSN
1063-8210
1557-9999
Abstract
In an effort toward high-speed and low-power I/O data link in the future exascale data server, this paper presents a signal source and a modulator in the $D$ -band. The split-ring resonator (SRR) structures are used to boost both the signal power and the extinction ratio (ER). The modulator manifests itself as a compact SRR whose magnetic resonance frequency can be modulated by high-speed data. Such a magnetic metamaterial achieves a significant reduction of radiation loss with high ER by stacking two auxiliary SRR unit cells with interleaved placement. The high-Q tank for oscillation is realized by a stacked SRR decorated with slow-wave transmission line (T-line) for electric field confinement. A four-way power-combined fundamental 80-GHz coupled-oscillator network is magnetically synchronized by the slow-wave T-line, which is frequency doubled to 160 GHz. Fabricated in the 65-nm CMOS process, the measured results show that: 1) the modulator achieves 3-dB insertion loss at the on-state with 43-dB isolation at the off-state, leading to a 40-dB ER at 125 GHz within an area of only $40\,\,\mu \text {m} \times 67\,\,\mu \text{m}$ and 2) the signal source achieves 6.3% frequency tuning range (FTR) with 3.7-mW peak output power at 160 GHz within 0.053-mm 2 active area. It has a measured phase noise of −105 dBc/Hz at 10-MHz offset, 5.5% dc-to-RF power efficiency, 70.1-mW/mm 2 power density, FOM of −171 dBc/Hz, and FOM $_{T}$ of −172.7 dBc/Hz.