학술논문
Experimental investigation of SiC 6.5kV JBS diodes safe operating area
Document Type
Conference
Author
Source
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) Power Semiconductor Devices and IC's (ISPSD), 2017 29th International Symposium on. :53-56 May, 2017
Subject
Language
ISSN
1946-0201
Abstract
This paper presents an experimental investigation of the dynamic performance of SiC 6.5kV JBS diodes. Using a hybrid Si SPT IGBT/SiC JBS diodes combination, we have analyzed the turn-off behavior limits of SiC JBS diodes and compared the result against a state-of-the-art Si PiN diode. The experimental results show that the JBS diodes can handle about 40A/chip at 125°C before going into thermal runaway. This maximum turn-off current value increases by about 50% when the diodes are operated at room temperature. The diodes dI/dt behaviour appear to be virtually independent of the DC-link voltage (at R G =18Ω). The comparison between turn-off curves for 6.5kV SiC and Si diodes shows that the use of SiC JBS diodes reduces the reverse recovery losses by more than 98%.