학술논문
Nickel vs. cobalt silicide integration for sub-50nm CMOS
Document Type
Conference
Author
Froment, B.; Muller, M.; Brut, H.; Pantel, R.; Carron, V.; Achard, H.; Halimaoui, A.; Boeuf, F.; Wacquant, F.; Regnier, C.; Ceccarelli, D.; Palla, R.; Beverina, A.; DeJonghe, V.; Spinelli, P.; Leborgne, O.; Bard, K.; Lis, S.; Tirard, V.; Morin, P.; Trentesaux, F.; Gravey, V.; Mandrekar, T.; Rabilloud, D.; Van, S.; Olson, E.; Diedrick, J.
Source
ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003. Solid-state device research - ESSDERC '03 European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on. :215-218 2003
Subject
Language
Abstract
In this work, NiSi SALICIDE has been fully integrated with sub-50 nm gate length transistors and compared to its CoSi/sub 2/ counterpart. Nickel thickness has been reduced to target the CoSi/sub 2/ sheet resistance. It was found that NiSi layers basic lattice planes with vertical orientation are often observed inside the grains. NiSi-based CMOS transistors show the same performance as CoSi2-transistors, but nickel can also silicide very narrow poly lines whereas cobalt can not. Moreover, NiSi reduces the STI diode-leakage perimeter, but increases channel side leakage, where CoSi/sub 2/ shows a "Schottky behavior". Thus we show that nickel allow MOS transistor scaling for future technology.