학술논문

An all-MOS low-power fast-transient 1.2 V LDO regulator
Document Type
Conference
Source
2017 13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) Ph.D. Research in Microelectronics and Electronics (PRIME), 2017 13th Conference on. :337-340 Jun, 2017
Subject
Aerospace
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Power, Energy and Industry Applications
Signal Processing and Analysis
Transient analysis
Transistors
Logic gates
Regulators
Voltage control
Capacitors
System-on-chip
low dropout regulator (LDO)
CMOS design
System-on-Chip (SoC)
power management
portable measurement devices
low-voltage low-power
Language
Abstract
This paper presents a fully integrated low-power 0.18 μm CMOS Low-Dropout (LDO) voltage regulator for battery-operated portable devices. A single stage high-gain folded cascode-compensated amplifier is used to attain good static performances, while thanks to a very simple dynamic bias circuit, transient performances are significantly enhanced. Results validate a 1.2 V output voltage from a 3.3 V to 1.3 V battery input voltage, delivering a load current of 50 mA over a 50 pF load. The quiescent current is only 5.9 μA, including an all-MOS 0.4 V reference voltage. Settling times are lower than 5.4 μs at full load transient.