학술논문
Analysis of Junction Leakage Current Failure of Nickel Silicide Abnormal Growth Using Advanced Transmission Electron Microscopy
Document Type
Periodical
Author
Source
IEEE Transactions on Semiconductor Manufacturing IEEE Trans. Semicond. Manufact. Semiconductor Manufacturing, IEEE Transactions on. 27(1):16-21 Feb, 2014
Subject
Language
ISSN
0894-6507
1558-2345
1558-2345
Abstract
This is the first paper to reveal the formation mechanism of the abnormal growth of nickel silicide that causes leakage-current failure in complementary metal–oxide–semiconductor (CMOS) devices by using advanced transmission electron microscope (TEM) techniques: electron tomography and spatially-resolved electron energy-loss spectroscopy (EELS). We reveal that the abnormal growth of Ni silicide results in a single crystal of ${\rm NiSi}_{2}$ and that it grows toward ${\rm Si}{\rm directions}$ along (111) planes with the Ni diffusion through the silicon interstitial sites. In addition, we confirm that the abnormal growth is related to crystal microstructure and crystal defects. These detailed analyses are essential to understand the formation mechanism of abnormal growths of Ni silicide.