학술논문
Hydrogen silsesquioxane tri-dimensional advanced patterning concepts for high density of integration in sub-7 nm nodes
Document Type
Conference
Author
Gaben, L.; Balan, V.; Euvrard, C.; Pauliac, S.; Dallery, J.-A.; Bustos, J.; Dechanoz, R.; Hemard, B.; Koscianski, L.; Bossy, X.; Arvet, C.; Vizioz, C.; Barnola, S.; Perrot, C.; Sturm, J.; Exbrayat, Y.; Loup, V.; Besson, P.; Perrin, B.; Previtali, B.; Samson, M.-P.; Barraud, S.; Monfray, S.; Boeuf, F.; Skotnicki, T.; Balestra, F.; Vinet, M.
Source
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) Ultimate Integration on Silicon (EUROSOI-ULIS), 2017 Joint International EUROSOI Workshop and International Conference on. :120-123 Apr, 2017
Subject
Language
ISSN
2472-9132
Abstract
Recent developments in CMOS devices such as FinFET, FDSOI or stacked nanowire FETs (SNWFETs) have led the industry to consider increasingly complex integration processes while aiming at smaller and smaller devices. This paper proposes new concepts of device integration based on the use of hydrogen silsesquioxane (HSQ). Recently employed to replace polysilicon sacrificial gate in gate last processes, its use could also be extended for building the whole transistor level including device lateral insulation, multiworkfonction layouts, self-aligned contacts and possibly the first layer of metal interconnects. If several EUV masks could be employed for such a use, HSQ patterning once enhanced by multi-electron beam lithography, could allow to perform all these features within a single exposure step without involving any conventional etching or stripping steps.