부산대학교 도서관

In this article, a heavy ion-induced single-event transient (SET) compact model is presented for the body-contacted partially depleted silicon on insulator (BC PDSOI) MOS transistor, which is interfaced with our Geant4 particle–matter interaction code. Cross comparisons with technology computer aided design (TCAD) simulations are provided as well as some modeling adds-on to existing models, addressing the case of energy deposition in the source and drain and improving the body discharge description through the body contact. In previous works, the experimental calibration of existing compact models rarely relies on the transistor-level collected charge distribution, measured during a heavy ions irradiation run. Still, the collected charge is a key measurable quantity as its value strongly influences circuit-level effects (like single-event upset (SEU) in memories). Moreover, reproducing the collected charge distribution within an irradiation run-through simulation is providing a proof that the stochastic nature of the experiment is correctly captured by the SET compact model. In this work, we expose an experimental statistical calibration procedure based on collected charge data obtained in Grand Accélérateur National d’Ions Lourds (GANIL).