부산대학교 도서관

Thermal metamaterial GaAs-based emitters operating in THz range were developed and investigated. Structures of desired parameters were simulated using 3D finite difference time domain method, and produced with a square geometry metasurface on the top structured by UV laser lithography. Depending on the metacell geometrical parameters the emission spectra of the heated samples (up to $400^{\circ}\mathrm{C})$ revealed resonant emission features in the range from 0.7 THz to 1.2 THz and the bandwidth of 0.29 THz. The demonstrated principle of using n-GaAs instead of metal bottom layer and unintentionally doped GaAs as dielectric spacer paves the way for thermal emitters compatible with III-V semiconductor system-based THz optoelectronics technology.