학술논문
Highly Manufacturable, Cost-Effective, and Monolithically Stackable 4F2 Single-Gated IGZO Vertical Channel Transistor (VCT) for sub-10nm DRAM
Document Type
Conference
Author
Ha, Daewon; Lee, Wonsok; Cho, M.H.; Terai, M.; Yoo, S.-W.; Kim, H.; Lee, Y.; Uhm, S.; Ryu, M.; Sung, C.; Song, Y.; Lee, K.; Park, S.W.; Lee, K.-S.; Tak, Y.S.; Hwang, E.; Chae, J.; Im, C.; Byeon, S.; Hong, M.; Sim, K.; Jung, W.J.; Ryu, H.; Hong, M.J.; Park, S.; Park, J.; Choi, Y.; Lee, S.; Woo, G.; Lee, J.; Kim, D.S.; Kuh, B.J.; Shin, Yu Gyun; Song, Jaihyuk
Source
2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023
Subject
Language
ISSN
2156-017X
Abstract
For the first time, we demonstrated experimentally 4F 2 single-gated IGZO-VCT, monolithically stacked on top of core/peripheral transistors without wafer bonding process for sub-10nm DRAM. Sufficiently low leakage current (I OFF ) of