학술논문
Electrooptical Modulating Device Based on a CMOS-Compatible ${\bm \alpha}$-Si:H/${\bm \alpha}$-SiCN Multistack Waveguide
Document Type
Periodical
Author
Source
IEEE Journal of Selected Topics in Quantum Electronics IEEE J. Select. Topics Quantum Electron. Selected Topics in Quantum Electronics, IEEE Journal of. 16(1):173-178 Jan, 2010
Subject
Language
ISSN
1077-260X
1558-4542
1558-4542
Abstract
In this paper, we report results on a field-effect-induced light modulation at $\lambda$ $=$ 1.55 $\mu$m in a high-index-contrast waveguide based on a multisilicon-on-insulator platform. The device is realized with the hydrogenated amorphous silicon ($\alpha$ -Si:H) technology, and it is suitable for monolithic integration in a CMOS IC. The device exploits the free-carrier optical absorption electrically induced in the semiconductor core waveguide. The amorphous silicon waveguiding layer contains several thin dielectric films of amorphous silicon carbonitride ($\alpha$ -SiCN) embedded along its thickness, thus highly enhancing the absorbing action of the modulator held in the on state.