학술논문

Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices
Document Type
Periodical
Source
IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 10:584-592 2022
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Single-photon avalanche diodes
Jitter
Semiconductor process modeling
Computational modeling
Solid modeling
Silicon
Photonics
Avalanche breakdown probability
breakdown voltage
jitter
photon detection efficiency (PDE)
single-photon avalanche diode (SPAD)
technology computer-aided design (TCAD)
Language
ISSN
2168-6734
Abstract
A new method to reliably simulate the PDE and jitter tail for realistic three-dimensional SPAD devices is presented. The simulation method is based on the use of electric field lines to mimic the carriers’ trajectories, and on one-dimensional models for avalanche breakdown probability and charges transport. This approach allows treating a three-dimensional problem as several one-dimensional problems along each field line. The original approach is applied to the McIntyre model for avalanche breakdown probability to calculate PDE, but also for jitter prediction using a dedicated advection-diffusion model. The results obtained numerically are compared with an extensive series of measurements and show a good agreement on a wide variety of device designs.