부산대학교 도서관

While epitaxial growth enhances carrier mobility of PMOS devices, it introduces an unwanted growth (UG) defect which is an artifact of Silicon Germanium (SiGe) component that becomes a yield detractor in high volume manufacturing. This paper describes the effect of high density UG defect on downstream CMP processes, detection methods using both defect scan and in-situ metrology. Use of high resolution defect scans and high throughput inline metrology was the key to detection of non-conforming material.