부산대학교 도서관

We conducted a real-time soft-error rate characterization of CMOS bulk 65-nm static random access memories (SRAMs) subjected to fusion neutrons during deuterium–deuterium (D-D) plasma operation at W–tungsten–Environment in Steady-state Tokamak (WEST). The test equipment, installed in the experimental hall at several locations of the tokamak, was irradiated during machine shots by a flux of particles dominated by primary 2.45-MeV neutrons. Real-time neutron metrology, neutron spectrometry, complementary characterization with monoenergetic neutrons, and Monte Carlo numerical simulations at both material and circuit levels have also been performed to analyze the experimental data. Our results suggest that higher energy neutrons, simultaneously produced by deuterium–tritium (D-T) reactions due to triton burn-up in the D-D plasma, play a significant role in the radiation response of SRAMs for which multiple cell upsets are detected and cannot be attributed to D-D neutrons.