부산대학교 도서관

The junction temperature is vital for the reliability evaluation and health management in silicon carbide (SiC) MOSFET applications. This article proposes a novel method to estimate the junction temperature under actual operating conditions, using the drain voltage falling edge time ( ${t_{f,\text {edge}}}$ ) as temperature-sensitive electrical parameters (TSEPs). Experimental results show that the proposed circuit can estimate the junction temperature with good linearity, high-temperature sensitivity, and load current independence. Furthermore, the proposed method is verified with the aged SiC MOSFET after the power cycling test. It shows a tiny impact of the bond wire degradation on the junction temperature estimation accuracy.