학술논문

Three-Level F-Type Inverter
Document Type
Periodical
Source
IEEE Transactions on Power Electronics IEEE Trans. Power Electron. Power Electronics, IEEE Transactions on. 36(10):11265-11275 Oct, 2021
Subject
Power, Energy and Industry Applications
Aerospace
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
General Topics for Engineers
Nuclear Engineering
Signal Processing and Analysis
Transportation
Inverters
Switches
Switching circuits
Modulation
Stress
Topology
Semiconductor diodes
Multilevel inverter
sinusoidal pulse-width modulation
F-type inverter
total harmonic distortion
Language
ISSN
0885-8993
1941-0107
Abstract
Given the recently available IGBT switch modules up to 6.5 kV, 1200 A rating, the prospect of the diode-free variant topology of the three-level neutral-point-clamped (3-level T-type, NPC) inverter in certain medium-voltage applications is bright due to its small part count and low conduction losses compared to the diode-clamped NPC inverter. However, within this voltage range, the input dc voltage rating of 50% of the switches per inverter phase-leg still poses limitations to the deployment of a 3-level T-type inverter. In view of these limitations, a reconfigured four-switch per phase-leg power circuit for a 3-level inverter (F-type) is presented in this article. The common node of the bidirectional switch in the T-type inverter is explored to have only one power switch rated at input dc voltage and three switches rated at half the input dc voltage per inverter leg. This reduced voltage stress has inverter cost and loss implications. The performances and competitiveness of the three-level F-type inverter are analyzed in detail and demonstrated with a hardware prototype. Results reveal that it has the potentials of being considered a real alternative to 3-level T-type inverters for certain low- and medium-voltage applications.