학술논문
Dose rate dependence of RADFET irradiation and post-irradiation responses
Document Type
Conference
Author
Source
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Microelectronics Microelectronics, 2004. 24th International Conference on. 2:661-664 vol.2 2004
Subject
Language
Abstract
Several RADFET biasing configurations have been compared in terms of radiation sensitivity, dose rate dependence and fading. Positive gate bias increases sensitivity, however the drawback is that the fading is also increased and dose rate dependence is observed. Samples irradiated with zero and negative gate bias have lower sensitivity, but don't exhibit significant fading and dose rate dependence. The mechanisms underlying the observed effects have been analysed.