학술논문
Highly Stackable 3D Ferroelectric NAND Devices: Beyond the Charge Trap Based Memory
Document Type
Conference
Author
Source
2022 IEEE International Memory Workshop (IMW) Memory Workshop (IMW), 2022 IEEE International. :1-4 May, 2022
Subject
Language
ISSN
2573-7503
Abstract
In this study, we demonstrate for the first time the multi-level capable 3D ferroelectricNAND (Fe-NAND) device using the 3D NAND test vehicle for mass production. The present 3D ferroelectric NAND shows the potential multi-level cell operation with the 3.4 V program/erase window. We also reported cycling and retention characteristics.