학술논문

An even harmonic type direct conversion SiGe-MMIC receiver for W-CDMA mobile terminals
Document Type
Conference
Source
2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280) Radio frequency integrated circuits Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE. :133-136 2002
Subject
Fields, Waves and Electromagnetics
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Multiaccess communication
Silicon germanium
Germanium silicon alloys
Acoustical engineering
Schottky diodes
Radio frequency
MMICs
Heterojunction bipolar transistors
Integrated circuit technology
Low-noise amplifiers
Language
ISSN
1529-2517
Abstract
An even harmonic type direct conversion MMIC receiver for W-CDMA mobile terminals in SiGe HBT technology is described. A 2-stage low noise amplifier (LNA) and two self biased anti-parallel diode pairs (APDPs) for even harmonic mixer (EH-MIX) are integrated into a single chip. The LNA employed dual bias feed circuit to improve the output power and linearity. The EH-MIX can obtain high IIP2 by using APDP. Noise performance of Schottky barrier diode (SBD) for APDP fabricated in SiGe process is lower than that of conventional SBD in the market. Both fabricated LNA and EH-MIX demonstrated high RF performances, and they are applicable to RF front-end of W-CDMA mobile terminals.