학술논문
Analysis and Design Considerations of Low-voltage Trench MOSFET for Inductive Load Switching Applications
Document Type
Conference
Author
Source
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2020 32nd International Symposium on. :557-560 Sep, 2020
Subject
Language
ISSN
1946-0201
Abstract
the paper summarizes both analytical and numerical considerations as well as experimental data of low voltage (50 V) trench MOSFET in unclamped (UIS) and self-clamped (SCIS) inductive switching applications. The herein presented data summarize failure mechanisms that ultimately limit UIS / SCIS rating of a device once all other design factors are exploited.