학술논문
Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors
Document Type
Periodical
Author
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 60(7):2224-2230 Jul, 2013
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
In this paper, we present self-consistent electrothermal simulations of single-finger and multifinger GaN vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) and lateral AlGaN/GaN high-electron-mobility transistors (HEMTs) and compare their thermal performance. The models are first validated by comparison with experimental dc characteristics, and then used to study the maximum achievable power density of the device without the peak temperature exceeding a safe operation limit of 150 $^{\circ}{\rm C}$ $(P_{150^{\circ}{\rm C}})$. It is found that the vertical MOSFETs have the potential to achieve a higher $P_{150^{\circ}{\rm C}}$ than the lateral HEMTs, especially for higher breakdown voltages and higher scaling level designs.