학술논문
Electron effective mass of Ga/sub 0.7/In/sub 0.3/N/sub x/As/sub 1-x/
Document Type
Conference
Author
Source
2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) Compound semiconductors Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on. :84-89 2003
Subject
Language
Abstract
The electron effective mass of GaInNAs is an important parameter for designing excellent long-wavelength lasers on GaAs. However, it has not yet been established. We find that it is 0.08/spl plusmn/0.1 m/sub 0/ (m/sub 0/: mass of free electron) almost independent of nitrogen content from 0.3 to 1.5%.