학술논문

A Radiation Hardened Smart Power Switch Based on SOI Technology
Document Type
Conference
Source
2023 IEEE 14th Latin America Symposium on Circuits and Systems (LASCAS) Circuits and Systems (LASCAS), 2023 IEEE 14th Latin America Symposium on. :1-4 Feb, 2023
Subject
Components, Circuits, Devices and Systems
Limiting
Radiation hardening (electronics)
Silicon-on-insulator
Power distribution
Switches
Power transistors
Transistors
Current limiter
fault isolation
power supply protection
telemetry
radiation hardness
Language
ISSN
2473-4667
Abstract
Two smart power switches were designed with the control circuit and the power transistor implemented in 0.6 μm Silicon on Insulator (SOI) technology. One version was implemented with standard transistors and the other with Radiation Hardened by Design (RHBD) techniques. These protection devices are used as current limiting circuits in power distribution systems. The short-circuit peak current was eliminated by adding an inductor in the power path and optimizing the frequency response of the system. The functional validation of the proposed circuits was carried out through simulations and test results.