부산대학교 도서관

This paper proposes a novel kinetic velocity model (KVM) for the drift-diffusion (DD) transport approach to describe ballistic effects. It also presents a simulation study of the ballistic effect in short-channel InGaAs and silicon FETs. Monte Carlo and subband Boltzmann transport equation results as well as DD simulations using the simple gate length-dependent ballistic mobility proposed in the literature and the KVM model are compared and discussed. Basic concepts, such as the Matthiessen rule and Fermi-Dirac statistics, are analyzed with a view on ballistic transport in devices in the linear and saturation regimes.