학술논문
Depletion voltage and charge collection for highly irradiated silicon microstrip detectors with various initial resistivities
Document Type
Conference
Author
Source
1998 IEEE Nuclear Science Symposium Conference Record. 1998 IEEE Nuclear Science Symposium and Medical Imaging Conference (Cat. No.98CH36255) Nuclear science and medical imaging Nuclear Science Symposium, 1998. Conference Record. 1998 IEEE. 2:852-856 vol.2 1998
Subject
Language
ISSN
1082-3654
Abstract
We have irradiated p-on-n silicon microstrip detectors of initial bulk resistivity between 0.2 and 2.7 k/spl Omega/-cm with 55 MeV protons to fluences of 0.8, 2.2 and 11/spl times/10/sup 13/ p/cm/sup 2/ (equivalent to twice the fluence in high energy protons), and have measured the depletion voltage before and after irradiation using C-V methods. In addition, we have measured the charge collection of minimum ionization on a single strip with a fast amplifier as a function of bias voltage. We compare the depletion voltage deduced from both methods for samples with different initial resistivities.