학술논문

Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures
Document Type
Periodical
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 46(3):228-231 Jun, 1999
Subject
Nuclear Engineering
Bioengineering
Cryogenics
Temperature
Electron traps
Radiation detectors
Silicon radiation detectors
Leakage current
Microstrip
Voltage
Charge carrier processes
Diodes
Language
ISSN
0018-9499
1558-1578
Abstract
In this work we show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of /spl sim/4/spl times/10/sup 14/ p/cm/sup 2/, no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T