부산대학교 도서관

In this work, we report the first comprehensive time-dependent dielectric breakdown (TDDB) study on ultra-thin HfO 2 -based ferroelectric under bipolar stress conditions. Here, field cycling is done on 7 nm Hf 0.5 Zr 0.5 O 2 (HZO) capacitors at different temperatures and bipolar stress fields. Despite involving polarization switching and associated large internal electric fields, bipolar cycling of ferroelectric HZO is shown to exhibit similar time-dependent dielectric breakdown acceleration trends to that of traditional dielectrics like SiO 2 . Notably, the temperature acceleration of time-dependent dielectric breakdown shows a linear dependence on the stress field similar to SiO 2 . Further, the field acceleration of time-dependent dielectric breakdown in ferroelectric HZO, while exhibiting functionally similar temperature dependence to that of SiO 2 , demonstrates considerably greater sensitivity to temperature.