학술논문
MRAM as Embedded Non-Volatile Memory Solution for 22FFL FinFET Technology
Document Type
Conference
Author
Golonzka, O.; Alzate, J. -G.; Arslan, U.; Bohr, M.; Bai, P.; Brockman, J.; Buford, B.; Connor, C.; Das, N.; Doyle, B.; Ghani, T.; Hamzaoglu, F.; Heil, P.; Hentges, P.; Jahan, R.; Kencke, D.; Lin, B.; Lu, M.; Mainuddin, M.; Meterelliyoz, M.; Nguyen, P.; Nikonov, D.; O'brien, K.; Donnell, J.O; Oguz, K.; Ouellette, D.; Park, J.; Pellegren, J.; Puls, C.; Quintero, P.; Rahman, T.; Romang, A.; Sekhar, M.; Selarka, A.; Seth, M.; Smith, A. J.; Smith, A. K.; Wei, L.; Wiegand, C.; Zhang, Z.; Fischer, K.
Source
2018 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2018 IEEE International. :18.1.1-18.1.4 Dec, 2018
Subject
Language
ISSN
2156-017X
Abstract
This paper presents key features of MRAM-based non-volatile memory embedded into Intel 22FFL technology. 22FFL is a high performance, ultra low power FinFET technology for mobile and RF applications with extensive high voltage and analog support, and a high level of design flexibility at low cost 1 . Embedded NVM technology presented here achieves 200°C 10-year retention capability combined with>10 6 cycle endurance and high die yield. Technology data retention, endurance and yield capabilities are demonstrated on 7.2Mbit arrays. We describe device-level MTJ characteristics, key integration features, cell characteristics, array operation specifics, as well as key yield milestones.