학술논문
Oxide based resistive RAM: ON/OFF resistance analysis versus circuit variability
Document Type
Conference
Author
Source
2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT) Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2014 IEEE International Symposium on. :81-85 Oct, 2014
Subject
Language
ISSN
1550-5774
2377-7966
2377-7966
Abstract
A deeper understanding of the impact of variability on Oxide-based Resistive Random Access Memory (so-called OxRRAM) is needed to propose variability tolerant designs to ensure the robustness of the technology. Although research has taken steps to resolve this issue, variability remains an important characteristic for OxRRAMs. In this paper, impact of variability on OxRRAM circuit performances is analysed quantitatively at a circuit level through electrical simulations. Variability is introduced at the memory cell level but also at the peripheral circuitry level. The aim of this study is to determine the contribution of each component of an OxRRAM circuit on the ON/OFF resistance ratio.