학술논문
1.3 /spl mu/m BH-FP laser with integrated monitor photodiode, 45/spl deg/ reflector for bottom side emission employing full on-wafer fabrication
Document Type
Conference
Source
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Indium phosphide and related materials Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th. :31-34 2002
Subject
Language
ISSN
1092-8669
Abstract
We report on a 1.3 /spl mu/m FP-BH laser with monolithically integrated monitor photodiode and 45/spl deg/ reflector for bottom side emission of the laser light. The devices are fabricated by employing a full on-wafer process including the formation of laser facets and the deposition of the high/antireflective coatings. Besides the possibility of on-wafer characterization, this device with its bottom side optical emission opens the way for the fabrication of low-cost optoelectronic modules based on semiconductor SMT-package technique.