부산대학교 도서관

A p + - doping method for silicon solar cells is presented whereby boron atoms from a pure boron (PureB) layer deposited by chemical vapor deposition using B 2 H 6 as precursor were thermally diffused into silicon. The applicability of this doping process for the doped surfaces of silicon solar cells was evaluated in terms of surface morphology after thermal diffusion, the boron dopant profiles, and sheet resistances, as well as the recombination parameter $J_{0{\rm p+}}$ , when the doped layers were passivated by Al 2 O 3 films prepared by atomic layer deposition. Adequate surface passivation could be achieved with a surface recombination contribution to $J_{0{\rm p+}}$ of