학술논문
Improved device ruggedness by floating buffer ring
Document Type
Conference
Source
12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Power semiconductor devices and ICs Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on. :153-156 2000
Subject
Language
ISSN
1063-6854
Abstract
An integrated low-substrate-leakage diode structure is considered, operated in reverse breakdown mode, having a parasitic npn transistor. At high current, the Kirk effect, causing shift of the potential by the space charge of moving carriers, leads to high electric fields and causes device degradation. The application of a protective n+ buffer ring around the cathode redistributes field and current and improves the ruggedness. This principle is also successfully applied for improved ESD performance of a lateral DMOST in a Silicon-on-Insulator process.