학술논문

Investigation of the Formation Mechanism of Hemispherical Grained Silicon (HSG-Si) on Undoped and Doped Amorphous Silicon for DRAM Applications
Document Type
Conference
Source
29th European Solid-State Device Research Conference Solid-State Device Research Conference, 1999. Proceeding of the 29th European. 1:232-235 1999
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Amorphous silicon
Random access memory
Annealing
Grain size
Capacitors
Capacitance
Dielectrics
Rough surfaces
Surface roughness
Leg
Language