학술논문

Tunnel and capacitive coupling optimization in FDSOI spin-qubit devices

Document Type

Conference

Author

Bertrand, B.; Martinez, B.; Li, J.; Paz, B. Cardoso; Millory, V.; Labracherie, V.; Brevard, L.; Sahin, H.; Roussely, G.; Sarrazin, A.; Meunier, T.; Vinet, M.; Niquet, Y.-M.; Brun, B.; Maurand, R.; De Franceschi, S.; Niebojewski, H.

Source

2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023

Subject

Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Nuclear Engineering
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Couplings
Silicon-on-insulator
Logic gates
Silicon
Stability analysis
Sensors
Optimization

Language

ISSN

2156-017X

Abstract

We present the ongoing development towards a spin qubit platform compatible with an industrial FDSOI CMOS fabrication flow. We introduce new patterning modules to suppress the diagonal tunnel coupling in quantum dot arrays and fabricate nanowire pairs for non-invasive charge sensing. Numerical simulation of the devices provides guidelines for optimization of the detection sensitivity up to quantum computing requirements.

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