학술논문

A 2.4/5.2-GHz Concurrent Dual-Band CMOS Low Noise Amplifier
Document Type
Periodical
Source
IEEE Access Access, IEEE. 5:21148-21156 2017
Subject
Aerospace
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Fields, Waves and Electromagnetics
General Topics for Engineers
Geoscience
Nuclear Engineering
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Transportation
Dual band
Impedance matching
Impedance
Resonant frequency
Capacitance
Power demand
Logic gates
CMOS
concurrent dual-band
low noise amplifier (LNA)
low power consumption
high gain
Language
ISSN
2169-3536
Abstract
A concurrent dual-band low-noise amplifier (LNA) targeted for W-LAN IEEE 802.11 a/b/g standards is designed using 0.13- $\mu \text{m}$ CMOS process. To attain the power-constrained simultaneous noise and input matching at 2.4 and 5.2 GHz, cascode common source inductive degeneration topology is adopted. The LNA achieves input reflection coefficients of −16.8 and −19.4 dB, forward gains of 19.3 and 17.5 dB at 2.4 and 5.2 GHz, respectively. Furthermore, the LNA exhibits noise figures of 3.2 and 3.3 dB with input 1-dB compression points of −29.6 and −28.2 dBm, while third-order input intercept points of −20.1 and −18.1 dBm at 2.4 and 5.2 GHz, respectively. The LNA dissipates 2.4 mW of power from a 1.2-V supply.