학술논문

A Comparative Study on Racetrack Memories: Domain Wall vs. Skyrmion
Document Type
Conference
Source
2018 IEEE 7th Non-Volatile Memory Systems and Applications Symposium (NVMSA) NVMSA Non-Volatile Memory Systems and Applications Symposium (NVMSA), 2018 IEEE 7th. :7-12 Aug, 2018
Subject
Components, Circuits, Devices and Systems
Computing and Processing
Engineering Profession
Power, Energy and Industry Applications
Micromagnetics
Current density
Magnetic domains
Magnetic domain walls
Magnetic separation
Nanoscale devices
Force
Spintronics, racetrack memory-(RM), domain wall (DW), skyrmion
Language
ISSN
2575-257X
Abstract
Racetrack memory (RM), a new storage scheme in which information flows along a nanotrack, has been considered as a potential candidate for future high-density storage device instead of the hard disk drive (HDD). The first RM, which was proposed in 2008 by IBM, relies on a train of opposite magnetic domains separated by domain walls (DWs), named DW-RM. Recently, an alternative information carrier, skyrmion, which was discovered in 2009, has been regarded as a promising replacement of DW for RM, named skyrmion-based RM (SK-RM). So, what are the relationship between DW and skyrmion? What are the key differences between DW and skyrmion, or between DW-RM and SK-RM? What benefits could SK-RM bring and what critical challenges need to be addressed before application? In this paper, we intend to answer these questions through a comparative study between DW-RM and SK-RM. This work will provide guidelines, especially, for circuit and architecture researchers on RM.