학술논문

High Single Fundamental-Mode Output Power From 795 nm VCSELs With a Long Monolithic Cavity
Document Type
Periodical
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 44(7):1144-1147 Jul, 2023
Subject
Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Vertical cavity surface emitting lasers
Apertures
Optical sensors
Optical device fabrication
Measurement by laser beam
Laser beams
Current measurement
VCSEL
795nm
high single fundamental mode power
long monolithic cavity
Language
ISSN
0741-3106
1558-0563
Abstract
A high fundamental-mode output power was achieved from a 795-nm vertical-cavity surface-emitting laser (VCSEL) with a long monolithic cavity. The epitaxial cavity spacer between active region and N-DBRs yields high diffraction losses for higher order transverse modes. The single mode optical power of 5.6mW under continuous wave was demonstrated in the long-cavity VCSELs with $4.5~\mu \text{m}$ oxide aperture. Above 10° reduction in divergence was found for long-cavity VCSELs. Decreased thermal resistance was also demonstrated in long cavity VCSELs due to additional homo-structure which can be as heat spreading layer. The change of VCSEL structure is only in epitaxy layer. So the fabrication process is completely same with the conventional fabrication, therefore, improves reproducibility and yield.