부산대학교 도서관

In the paper degradation effects such as the self-heating effect and DIBL effect in 2D MoS2 based MOSFET is investigated by simulations. It is considered transistors with Al 2 O 3 and HfO 2 as gate oxide and SiO 2 and HfO 2 as back oxide (BOX). The self-heating effect (SHE) is simulated by using the thermodynamic transport model. Dependence of DIBL(drain induced barrier lowering) effect and lattice temperature in the channel center on the gate length for transistors with different gate oxide and BOX materials is considered. Transistors with channel fully covered and partly covered (only under the gate) by gate oxide is considered. It is shown that the transistors with Al 2 O 3 as gate oxide and SiO 2 as BOX materials has higher immunity against the DIBL effect and transistors with HfO 2 as gate oxide and HfO 2 as BOX materials has higher immunity against the SHE.