부산대학교 도서관

Static curve trace is an essential test method to discover parametric damage on a signal without adding stimulus to an electronic component, it is relatively quick process, and resembling to a detailed continuity test. Yet, its drawback comes when pad signal that we measured, especially VDD power line, routed only at specific or outer pad circuitries, leaving various internal untested circuits within the integrated circuit. This consequence in actual defect site cannot be detected in certain areas. A novel approach to combine layout circuitry study and focus ion beam (FIB) edit are used to create additional power (VDD) to this untested internal circuits to have an extensive characterization of failure mode coupled with fault localization techniques. This paper demonstrates the effectiveness of this method with low IDDQ leakage failure analysis.