학술논문

Fabrication and simulation of antireflective nanostructures on c-Si solar cells
Document Type
Conference
Source
2011 International Quantum Electronics Conference (IQEC) and Conference on Lasers and Electro-Optics (CLEO) Pacific Rim incorporating the Australasian Conference on Optics, Lasers and Spectroscopy and the Australian Conference on Optical Fibre Technology Quantum Electronics Conference & Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), 2011. :1529-1531 Aug, 2011
Subject
Photonics and Electrooptics
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Reflectivity
Silicon
Surface waves
Current density
Surface treatment
Nanostructures
Photovoltaic cells
Language
Abstract
The enhanced photoelectric conversion is demonstrated in nanostructured photovoltaics using colloidal lithography and reactive-ion-etching (RIE) techniques. From the reflectance spectroscopy, trapezoid-cone arrays (TCAs) Si with SiNx passivation layer effectively suppress the reflection in the wavelength range from 400 nm to 1000 nm. The power conversion shows the TCAs Si solar cell with 120 nm thickness of SiNx passivation layer achieves 13.736%, which is 8.87% and 2.56% enhancement compared to the conventional KOH-textured photovoltaics and TCAs with 80-nm-thick SiNx, respectively. An optical simulation based on RCWA describes the optimized shape of nano structure to further reduce reflectance for maximum light absorption.