학술논문

A 3.5~7.5 GHz GaAs HEMT Cryogenic Low-NoiseAmplifier Achieving 5 Kelvin Noise Temperature for Qubits Measurement
Document Type
Conference
Source
2023 IEEE/MTT-S International Microwave Symposium - IMS 2023 Microwave Symposium - IMS 2023, 2023 IEEE/MTT-S International. :672-675 Jun, 2023
Subject
Components, Circuits, Devices and Systems
Computing and Processing
Engineering Profession
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Kelvin
Impedance matching
Qubit
Gallium arsenide
Cryogenics
HEMTs
Gain measurement
cryogenic low noise amplifier
LNA
GaAs
transmon
quantum computer
impedance matching network
Language
ISSN
2576-7216
Abstract
The measurement of the fast-increasing number of qubits necessitates the use of a large number of specialized cryogenic low-noise amplifiers (LNAs).). This work presents a broadband LNA designed with discrete GaAs HEMT components which operate well at ~3.6 K temperature. The dual-frequency optimum noise matching network and output matching elements of the first stage were employed to optimize the equivalent noise temperature (NT) and the input return loss in a wideband. Measurement results at 3.6 K ambient temperature show that the LNA achieved an equivalent NT of 30 dB in the 3.5 GHz to 7.5 GHz band with a minimum of 5 Kelvin at ~6.5 GHz. The best visibility of ~0.891 is achieved when using the LNA to observe a superconducting transmon qubit without using a JPA.