학술논문
Heterogeneous integration of InGaN and Silicon solar cells for enhanced energy harvesting
Document Type
Conference
Author
Source
2012 38th IEEE Photovoltaic Specialists Conference Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE. :003076-003079 Jun, 2012
Subject
Language
ISSN
0160-8371
Abstract
We report here enhanced solar energy harvesting using a hybrid solar cell with silicon solar cells (visible-infrared light) on bottom and an InGaN solar cell (UV light) on top. The InGaN solar cell with 30 QW periods has peak external quantum efficiency (EQE) of 40 % at 380 nm, an open circuit voltage (V oc ) of 2.0 V, a short circuit current (I sc ) of 0.8 mA/cm 2 , and fill factor of 55%. We have demonstrated that the application of an InGaN “active window” to a silicon solar cell counterbalances the encapsulation power loss typically suffered during production of a solar panel