학술논문
Ag Ionic Memory Cell Technology for Terabit-Scale High-DensityApplication
Document Type
Conference
Author
Source
2019 Symposium on VLSI Circuits VLSI Circuits, 2019 Symposium on. :T188-T189 Jun, 2019
Subject
Language
ISSN
2158-5636
Abstract
We demonstrated a cross-point memory array composed of 40nm Ag ionic memory cell with sub- μ A and selectorless operation and 10-year data retention, making it a promising candidate for terabit-scale high-density memory application. Discontinuous conductive path with large and dense Ag clusters enabled 10-year retention even at sub- μ A current with keeping high non-linearity in I-V. We implemented, for the first time, the improved cell into a 40nm cross-point array and demonstrated narrow read distribution which satisfies requirements for reliable array operation.