학술논문

Optoelectronic Performance of Radial-Junction Si Nanopillar and Nanohole Solar Cells
Document Type
Periodical
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 59(9):2368-2374 Sep, 2012
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Current density
Photovoltaic cells
Photoconductivity
Periodic structures
Surface waves
Radial junction
Si nanohole (SiNH)
Si nanopillar (SiNP)
solar cells
Language
ISSN
0018-9383
1557-9646
Abstract
Two typical radial-junction structures, Si nanopillars (SiNP) and nanoholes, were modeled and compared for solar cell applications. From the physical model using the transport equations, the output performances, e.g., short-circuit current density, open-circuit voltage, energy conversion efficiency, fill factor, etc., were simulated. A maximum efficiency of 21.0$\%$ was predicted for Si nanoholes, demonstrating a superior performance of the radial-junction structure compared to SiNPs (14.6 $\%$). Also, the dependence of the conversion efficiency on various structural parameters, e.g., substrate thickness, height, feature radius, junction depth, emitter doping concentration, as well as front and back surface recombination velocities, etc., was investigated, providing a design principle for high-efficiency radial-junction solar cells.