학술논문
Microstructure development and evolution
Document Type
Conference
Author
Source
International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Simulation of semiconductor processes and devices Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on. :19-22 2003
Subject
Language
Abstract
We employ a level set-based geometry tracking software using a "grain continuum" representation, together with models for selected IC manufacturing processes and for microstructural evolution to study the development of grain structures. We consider electroless deposition, physical vapor deposition and grain boundary migration during curvature-driven ripening. We use an "encapsulation technique" to convert atomistic data; e.g., from Monte Carlo simulations of nucleation, to continua for input to deposition studies.